This is a schematic of a fully functional flexible memory array on flexible substrates. Credit: KAIST
The team of Professor Keon Jae Lee (Department of
Materials Science and Engineering, KAIST) has developed fully functional
flexible non-volatile resistive random access memory (RRAM) where a memory cell
can be randomly accessed, written, and erased on a plastic substrate
Memory is an essential part in
electronic systems, as it is used for data processing, information storage and
communication with external devices. Therefore, the development of flexible
memory has been a challenge to the realization of flexible electronics.
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This is an image of flexible memory wrapped on quartz rod. Credit: KAIST |
Although several flexible memory
materials have been reported, these devices could not overcome cell-to-cell interference
due to their structural and material limitations. In order to solve this
problem, switching elements such as transistors must be integrated with the
memory elements. Unfortunately, most transistors built on plastic substrates(e.g.,
organic/oxide transistors) are not capable of achieving the sufficient
performance level with which to drive conventional memory. For this reason, random
access memory operation on a flexible substrate has not been realized thus far.
Recently, Prof. Lee's research team
developed a fully functional flexible memory that is not affected by
cell-to-cell interference. They solved the cell-to-cell interference issue by
integrating a memristor (a recently spotlighted memory material as
next-generation memory elements) with a high-performance single-crystal silicon
transistor on flexible substrates. Utilizing these two advanced technologies,
they successfully demonstrated that all memory functions in a matrix memory
array (writing/reading/erasing) worked perfectly.
Prof. Lee said, "This result
represents an exciting technology with the strong potential to realize all
flexible electronic systems for the development of a freely bendable and
attachable computer in the near future."
This result was published in the
October online issue of the Nano Letters ACS journal.
Provided by The Korea Advanced
Institute of Science and Technology (KAIST)
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